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Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Related Experiment Video

Updated: Jun 16, 2026

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
15:58

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing

Published on: December 3, 2013

Bragg coupling efficiency for guided acoustooptic interaction in GaAs.

K W Loh, W S Chang, W R Smith

    Applied Optics
    |February 16, 2010
    PubMed
    Summary
    This summary is machine-generated.

    This study explores guided acousto-optical interaction in Gallium Arsenide (GaAs) waveguides. Optimal conditions for high diffraction efficiency involve specific optical modes and acoustic wave propagation, requiring minimal acoustic power.

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    Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
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    Published on: October 13, 2017

    Related Experiment Videos

    Last Updated: Jun 16, 2026

    Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
    15:58

    Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing

    Published on: December 3, 2013

    Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
    12:57

    Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

    Published on: October 13, 2017

    Area of Science:

    • Optoelectronics
    • Materials Science
    • Acousto-optics

    Background:

    • Gallium Arsenide (GaAs) is a key material in optoelectronic devices.
    • Acousto-optic devices modulate light using acoustic waves.
    • Understanding guided-wave acousto-optic interactions is crucial for device optimization.

    Purpose of the Study:

    • To investigate guided acousto-optic interaction in GaAs.
    • To determine optimal parameters for efficient light modulation.
    • To compare theoretical calculations with experimental data.

    Main Methods:

    • Numerical simulation of acousto-optic interaction.
    • Analysis of parameters: waveguide thickness, optical mode type, acoustic frequency, propagation direction, and substrate refractive index.
    • Calculation of required acoustic power and diffraction efficiency.

    Main Results:

    • Best efficiency achieved for TE(0) to TE(0) optical modes.
    • Optimal acoustic surface wave propagation along the '011' direction.
    • Waveguide thickness near cut-off requires ~75 mW acoustic power for 100% diffraction.
    • Radio frequency (RF) bandwidth is limited by the interdigital transducer's frequency bandwidth.

    Conclusions:

    • Guided acousto-optic interaction in GaAs can be highly efficient under specific conditions.
    • The findings provide a basis for designing advanced acousto-optic modulators.
    • Calculated results show good agreement with experimental data at 1.06 µm wavelength.