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Updated: Jun 16, 2026

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

High-performance single nanowire tunnel diodes.

Jesper Wallentin¹, Johan M Persson, Jakob B Wagner

¹Solid State Physics, Lund University, Box 118, S-221 00, Lund, Sweden. jesper.wallentin@ftf.lth.se

|February 19, 2010

Summary

This summary is machine-generated.

We developed single nanowire tunnel diodes with high performance at room temperature. These indium phosphide-gallium arsenide nanowires show potential for advanced solar cells and electronic devices.

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Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

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Analysis of Contact Interfaces for Single GaN Nanowire Devices

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Published on: November 15, 2013

Area of Science:

Materials Science
Nanotechnology
Semiconductor Physics

Background:

Type-II InP-GaAs heterostructures are crucial for advanced electronic and optoelectronic devices.
Nanowire architectures offer unique properties due to their high surface-to-volume ratio.
Tunnel diodes are essential components in high-frequency electronics and optoelectronics.

Purpose of the Study:

To demonstrate single nanowire tunnel diodes utilizing type-II InP-GaAs axial heterostructures.
To characterize the performance of these nanowires at room and cryogenic temperatures.
To assess their potential for solar cell and electronic applications.

Main Methods:

Fabrication of single axial InP-GaAs heterostructure nanowires.
Electrical characterization of nanowire tunnel diodes.
Measurement of current density and peak-to-valley current ratio (PVCR) at various temperatures.

Main Results:

Achieved room temperature peak current densities up to 329 A/cm(2).
Observed high peak-to-valley current ratios (PVCR) of 8.2 at room temperature and 27.6 at liquid helium temperature.
Demonstrated robust performance despite the large surface-to-volume ratio of the nanowires.

Conclusions:

Single nanowire tunnel diodes based on type-II InP-GaAs heterostructures exhibit excellent performance.
These nanowires are promising candidates for next-generation solar cells.
The demonstrated devices hold potential for various high-performance electronic applications.