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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

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Interference filters: single crystal multilayer AlAs-GaAs.

J P van der Ziel, M Ilegems

|February 19, 2010

Summary

This summary is machine-generated.

High and low reflectance single crystal quarter wave stacks were grown using alternating layers of aluminum arsenide (AlAs) and gallium arsenide (GaAs) on GaAs substrates.

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Area of Science:

Materials Science
Optoelectronics
Semiconductor Physics

Background:

Quarter-wave stacks are crucial optical components.
High-quality single crystal growth is essential for precise optical properties.

Purpose of the Study:

To grow high and low reflectance single crystal quarter wave stacks.
To utilize alternating layers of AlAs and GaAs for optical applications.

Main Methods:

Single crystal quarter wave stacks were grown.
Alternating layers of aluminum arsenide (AlAs) and gallium arsenide (GaAs) were used.
Molecular beam epitaxy (MBE) was employed on GaAs substrates.

Main Results:

Successfully grew single crystal quarter wave stacks.
Achieved high and low reflectance properties.
Demonstrated the effectiveness of AlAs/GaAs heterostructures.

Conclusions:

AlAs/GaAs single crystal quarter wave stacks can be effectively grown by MBE.
The grown structures exhibit tunable high and low reflectance.
This method is suitable for fabricating advanced optical devices.