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Related Experiment Video

Updated: Jun 16, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Zinc-diffused two-dimensional optical waveguides in n-type GaAs.

E Garmire, D F Lovelace, G H Thompson

    Applied Optics
    |February 19, 2010
    PubMed
    Summary
    This summary is machine-generated.

    Researchers fabricated two-dimensional waveguides in gallium arsenide (GaAs) using zinc diffusion. The observed waveguide cutoff behavior aligns with theoretical predictions for the refractive index profile.

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    Area of Science:

    • Materials Science
    • Optoelectronics
    • Semiconductor Physics

    Background:

    • Two-dimensional waveguides are crucial components in integrated optics.
    • Gallium arsenide (GaAs) is a key semiconductor material for optoelectronic devices.
    • Understanding waveguide properties is essential for device performance.

    Purpose of the Study:

    • To fabricate two-dimensional waveguides in n-type GaAs.
    • To experimentally investigate the relationship between waveguide cutoff and channel width.
    • To compare experimental results with theoretical models of the refractive index profile.

    Main Methods:

    • Fabrication of two-dimensional waveguides via zinc diffusion in n-type GaAs.
    • Experimental measurement of waveguide cutoff characteristics.
    • Analysis of the refractive index profile.

    Main Results:

    • Successful fabrication of two-dimensional waveguides in n-type GaAs.
    • Experimental data on waveguide cutoff dependence on channel width was obtained.
    • The experimental observations showed strong agreement with theoretical models.

    Conclusions:

    • The fabrication method is effective for creating GaAs waveguides.
    • Theoretical models accurately predict the optical behavior of these waveguides.
    • This work validates the use of zinc diffusion for fabricating optical devices in GaAs.