Related Experiment Video
Updated: Jun 16, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Refractive indexes and temperature coefficients of germanium and silicon
Abstract:
The refractive indexes and their variations with temperature for silicon and germanium have been measured over the 95-298-K and 2.5-12-microm ranges. Data are given for the refractive index that are in reasonable agreement with those of previous investigators. For dn/dT the values are independent of wavelength and are approximately 1.5 x 10(-4) (K)(-1) and 4.0 x 10(-4) (K)(-1) for silicon and germanium, respectively.
Related Concept Videos
Types of Semiconductors
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Resistivity
Fermi Level
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Susceptibility, Permittivity and Dielectric Constant
