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Related Concept Videos

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

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Related Experiment Video

Updated: Jun 16, 2026

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

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Parallel end-butt coupling for optical integrated circuits.

R G Hunsperger, A Yariv, A Lee

    Applied Optics
    |February 20, 2010
    PubMed
    Summary

    Researchers coupled GaAs laser diodes to Tantalum pentoxide waveguides using parallel end-butt coupling. Optimal waveguide thickness achieved 45.1% coupling efficiency, with further analysis on misalignment tolerance.

    Area of Science:

    • Optoelectronics
    • Materials Science
    • Photonics

    Background:

    • Efficient coupling of semiconductor lasers to optical waveguides is crucial for integrated photonic devices.
    • Tantalum pentoxide (Ta2O5) thin films offer promising properties for optical waveguide applications.

    Purpose of the Study:

    • To investigate the parallel end-butt coupling method for integrating Gallium Arsenide (GaAs) laser diodes with Ta2O5 thin film waveguides.
    • To determine the optimal waveguide and laser layer thicknesses for maximizing coupling efficiency.
    • To evaluate the tolerance of the coupling method to lateral and angular misalignment.

    Main Methods:

    • Utilized parallel end-butt coupling technique.
    • Fabricated Ta2O5 thin film waveguides.
    • Coupled GaAs laser diodes to the waveguides.

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  • Performed theoretical calculations for coupling efficiency.
  • Experimentally measured coupling efficiencies for various device geometries.
  • Assessed the impact of misalignment on coupling performance.

    • Main Results:

    • Theoretical calculations predicted up to 90% coupling efficiency into the lowest order waveguide mode when waveguide thickness (tg) equals laser emitting layer thickness (tL).
    • Experimental measurements achieved a maximum coupling efficiency of 45.1% for a tg/tL ratio of 0.34.
    • The study theoretically and experimentally quantified the tolerance to laser-waveguide misalignment.

    Conclusions:

    • Parallel end-butt coupling is a viable method for integrating GaAs lasers with Ta2O5 waveguides.
    • Waveguide and laser layer thickness optimization is critical for maximizing coupling efficiency.
    • Understanding misalignment tolerance is essential for practical device implementation in photonic circuits.