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Electrically accessible Lippmann hologram memory.

T Yasuhira, Y Mitsuhashi, T Morikawa

    Applied Optics
    |February 20, 2010
    PubMed
    Summary
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    Researchers developed electrically accessible Lippmann holograms using iron-doped lithium niobate crystals. This advancement enables electrical writing and reading, demonstrated in a stacked, double-layered memory device with reduced interlayer crosstalk.

    Area of Science:

    • Materials Science
    • Optoelectronics
    • Holography

    Background:

    • Lithium niobate (LiNbO3) is a versatile material for optical applications.
    • Fe-doping enhances photorefractive properties for holographic data storage.
    • Electrical control in holographic systems remains a significant challenge.

    Purpose of the Study:

    • To demonstrate electrically accessible Lippmann holograms.
    • To investigate interlayer crosstalk in stacked holographic structures.
    • To showcase device operation using a double-layered memory system.

    Main Methods:

    • Fabrication of Lippmann-type holograms using Fe-doped LiNbO3 crystals.
    • Implementation of electrical methods for both holographic writing and reading.
    • Analysis of interlayer crosstalk in a stacked configuration.

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    Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
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    Published on: September 25, 2020

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  • Demonstration of a double-layered memory device.

    • Main Results:

    • Successful construction of Lippmann holograms with electrical access for writing and reading.
    • Quantification and discussion of interlayer crosstalk in stacked structures.
    • Validation of device operations in a double-layered memory configuration.

    Conclusions:

    • Fe-doped LiNbO3 crystals enable electrically controlled Lippmann holograms.
    • Electrical access significantly advances holographic data storage potential.
    • The demonstrated double-layered memory shows promise for practical applications by managing crosstalk.