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Ultrathin SiO2 layer with a low leakage current density formed with approximately 100% nitric acid vapor
Woo-Byoung Kim1, Taketoshi Matsumoto, Hikaru Kobayashi
1Institute of Scientific and Industrial Research, Osaka University, CREST, Japan Science and Technology Agency, Ibaraki, Osaka, Japan.
Nanotechnology
|February 23, 2010
Abstract:
An ultrathin silicon dioxide (SiO(2)) layer with 0.65-1.5 nm thickness has been formed by approximately 100% nitric acid (HNO(3)) vapor oxidation, and its electrical characteristics and physical properties are investigated. The oxidation kinetics follows a parabolic law except for the ultrathin (
