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Published on: July 27, 2018
Analysis of photogenerated random telegraph signal in single electron detector (photo-SET)
M Troudi1, Na Sghaier, A Kalboussi
1Institut des Nanotechnologies de Lyon (site INSA UMR 5270), Bât. Blaise Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex, France. manel.troudi@ipein.rnu.tn
Abstract:
In this paper, we analyzed slow single traps, situated inside the tunnel oxide of small area single electron photo-detector (photo-SET or nanopixel). The relationship between excitation signal (photons) and random-telegraph-signal (RTS) was evidenced. We demonstrated that photoinduced RTS observed on a photo-detector is due to the interaction between single photogenerated charges that tunnel from dot to dot and current path. Based on RTS analysis for various temperatures, gate bias and optical power we determined the characteristics of these single photogenerated traps: the energy position within the silicon bandgap, capture cross section and the position within the Si/SiO(x = 1.5) interfaces.
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