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Updated: Jun 16, 2026

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
Published on: April 18, 2019
Dynamic saturation in Semiconductor Optical Amplifiers: accurate model, role of carrier density, and slow light
Perrine Berger1, Mehdi Alouini, Jérôme Bourderionnet
1Thales Research & Technology, 1 av. Augustin Fresnel, Palaiseau Cedex, France. Perrine.Berger@thalesgroup.com
Abstract:
We developed an improved model in order to predict the RF behavior and the slow light properties of the SOA valid for any experimental conditions. It takes into account the dynamic saturation of the SOA, which can be fully characterized by a simple measurement, and only relies on material fitting parameters, independent of the optical intensity and the injected current. The present model is validated by showing a good agreement with experiments for small and large modulation indices.
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