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Enhanced electro-optic phase shifts in suspended waveguides.

T H Stievater1, D Park, W S Rabinovich

  • 1Naval Research Laboratory, Washington, DC 20375, USA.

Optics Express
|February 23, 2010
PubMed
Summary
This summary is machine-generated.

Suspended Indium Gallium Arsenide/Indium Gallium Arsenide Phosphide (InGaAs/InGaAsP) quantum well waveguides show improved electro-optic phase shifts. Selective etching enhances optical mode overlap, leading to better performance in optical communication devices.

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Area of Science:

  • Optoelectronics
  • Materials Science
  • Photonics

Background:

  • Quantum well waveguides are crucial for optical modulators.
  • Electro-optic performance is often limited by material overlap.
  • Indium Gallium Arsenide/Indium Gallium Arsenide Phosphide (InGaAs/InGaAsP) is a key material system.

Purpose of the Study:

  • To investigate the effect of waveguide suspension on electro-optic phase shifts.
  • To enhance the overlap between optical modes and quantum well layers.
  • To optimize InGaAs/InGaAsP waveguides for optical communication.

Main Methods:

  • Fabrication of suspended and attached InGaAs/InGaAsP quantum well waveguides.
  • Selective etching of the semiconductor material beneath the waveguides.
  • Measurement of electro-optic phase shifts and propagation loss.
  • Characterization of optical mode overlap.

Main Results:

  • Suspended waveguides exhibited enhanced electro-optic phase shifts compared to attached ones.
  • Selective etching improved the overlap between the optical mode and quantum wells.
  • A voltage length product of 0.41 V-cm was achieved.
  • Propagation loss for the TE mode in the L-band was measured at 2.3 +/- 0.7 dB/cm.

Conclusions:

  • Suspending InGaAs/InGaAsP quantum well waveguides significantly boosts electro-optic performance.
  • Optimized mode overlap via selective etching is key to enhanced phase shifts.
  • These findings are promising for developing efficient optical modulators.