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Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using
Chu-Young Cho1, Jin-Bock Lee, Sang-Jun Lee
1Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, Republic of Korea.
Abstract:
We report on the improvement of light output power of InGaN/GaN blue light-emitting diodes (LEDs) by lateral epitaxial overgrowth (LEO) of GaN using a pyramidal-shaped SiO(2) mask. The light output power was increased by 80% at 20 mA of injection current compared with that of conventional LEDs without LEO structures. This improvement is attributed to an increased internal quantum efficiency by a significant reduction in threading dislocation and by an enhancement of light extraction efficiency by pyramidal-shaped SiO(2) LEO mask.
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