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Design of a short electro-optic modulator based on SiGe HBT structure
Shengling Deng1, Tuhin G Neogi, Joseph Novak
1Department of Electrical, Computer, and System Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180, USA.
Optics Express
|February 23, 2010
Summary
A novel silicon-germanium (SiGe) electro-optic modulator is proposed for 1.55 micrometer wavelength applications. This device achieves a low ON-state voltage of 1.4V with fast switching speeds.
Area of Science:
- Photonics
- Materials Science
- Electrical Engineering
Background:
- Silicon photonics is a rapidly growing field for optical communication.
- Electro-optic modulators are key components in photonic integrated circuits.
- Silicon-germanium (SiGe) offers potential for enhanced electro-optic performance.
Purpose of the Study:
- To propose a novel SiGe electro-optic modulator design.
- To evaluate the modulator's performance at a 1.55 micrometer wavelength.
- To demonstrate low power consumption and high-speed modulation capabilities.
Main Methods:
- Design of a Mach-Zehnder Interferometer (MZI) waveguide structure.
- Utilizing SiGe material for enhanced electro-optic effect.
- Electrical biasing to achieve a pi phase shift.
Main Results:
- Proposed modulator operates at 1.55 micrometer wavelength.
- Achieved an "ON" state voltage of 1.4V.
- Required MZI arm length of 73.6 microm for pi phase shift.
- Reported total attenuation loss of 3.95 dB.
- Demonstrated rise and fall delay times of 70.9 ps and 24.5 ps, respectively.
Conclusions:
- The proposed SiGe electro-optic modulator shows promise for high-performance optical communication.
- Low operating voltage and fast switching speeds are key advantages.
- Further research can optimize SiGe modulators for next-generation photonic systems.
