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Updated: Jun 16, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters
O Jambois1, F Gourbilleau, A J Kenyon
1MIND-IN2UB, Dept. Electrònica, Universitat de Barcelona, Martí i Fanquès 1, 08028, Barcelona, CAT, Spain. ojambois@el.ub.es
Abstract:
This study reports the estimation of the inverted Er fraction in a system of Er doped silicon oxide sensitized by Si nanoclusters, made by magnetron sputtering. Electroluminescence was obtained from the sensitized erbium, with a power efficiency of 10(-2)%. By estimating the density of Er ions that are in the first excited state, we find that up to 20% of the total Er concentration is inverted in the best device, which is one order of magnitude higher than that achieved by optical pumping of similar materials.

