Next generation 1.5 microm terahertz antennas: mesa-structuring of InGaAs/InAlAs photoconductive layers

H Roehle1, R J B Dietz, H J Hensel

  • 1Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institut, Einsteinufer 37, 10587 Berlin, Germany. roehle@hhi.fraunhofer.de

Optics Express
|February 23, 2010
PubMed
Summary

Mesa-structuring of InGaAs/InAlAs layers using chemical assisted ion beam etching significantly improved terahertz photoconductive antennas. These antennas show order-of-magnitude gains in emitter power, reduced dark current, and enhanced receiver sensitivity for 1.5 micrometer operation.

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