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Updated: Jun 16, 2026
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Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
Published on: July 8, 2013
Next generation 1.5 microm terahertz antennas: mesa-structuring of InGaAs/InAlAs photoconductive layers
H Roehle1, R J B Dietz, H J Hensel
1Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institut, Einsteinufer 37, 10587 Berlin, Germany. roehle@hhi.fraunhofer.de
Optics Express
|February 23, 2010
Abstract:
Mesa-structuring of InGaAs/InAlAs photoconductive layers is performed employing a chemical assisted ion beam etching (CAIBE) process. Terahertz photoconductive antennas for 1.5 microm operation are fabricated and evaluated in a time domain spectrometer. Order-of-magnitude improvements versus planar antennas are demonstrated in terms of emitter power, dark current and receiver sensitivity.
