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Semiconductor lasers with a thin active layer (>0.1 microm for optical communications.

N Chinone, H Nakashima, I Ikushima

    Applied Optics
    |February 23, 2010
    PubMed
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    Optimizing double heterostructure lasers for optical communications, this study finds an 800 A active layer thickness minimizes threshold current. Thin active layers also improve beam divergence and optical fiber coupling efficiency.

    Area of Science:

    • Optoelectronics
    • Semiconductor Lasers
    • Optical Communications

    Background:

    • Double heterostructure lasers are crucial light sources for optical communication systems.
    • Optimizing device parameters, particularly active layer thickness, is essential for enhanced performance.
    • Previous research has explored various configurations, but specific parameter optimization for thin active layers remains key.

    Purpose of the Study:

    • To investigate double heterostructure lasers with thin active layers.
    • To optimize device parameters for enhanced performance as light sources in optical communication systems.
    • To determine the optimal active layer thickness for minimizing threshold current density and maximizing coupling efficiency.

    Main Methods:

    • Theoretical investigation and simulation of double heterostructure laser diodes.

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  • Systematic variation of active layer thickness to analyze its impact on device characteristics.
  • Measurement and analysis of threshold current density, beam divergence, and optical fiber coupling efficiency.

    • Main Results:

    • A minimum threshold current density was observed for an active layer thickness of approximately 800 Angstroms in undoped active layers.
    • For active layer thicknesses below 0.1 micrometers, the full width of beam divergence was less than 30 degrees.
    • An average coupling efficiency of 50% and a maximum of 80% into a low numerical aperture (0.05) optical fiber was achieved, especially with a focusing lens.

    Conclusions:

    • Thin active layers in double heterostructure lasers are critical for achieving low threshold current density and desirable beam characteristics.
    • The optimal active layer thickness of around 800 Angstroms significantly enhances performance for optical communication applications.
    • These findings provide valuable insights for designing efficient laser diodes for high-performance optical communication systems.