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Scanning-probe Single-electron Capacitance Spectroscopy

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Published on: July 30, 2013

Measuring charge transport in a thin solid film using charge sensing.

Kenneth Maclean¹, Tamar S Mentzel, Marc A Kastner

¹Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA. kmaclean@mit.edu

|February 25, 2010

Summary

This summary is machine-generated.

We used a novel charge sensing technique to measure charge transport in hydrogenated amorphous silicon (a-Si:H) thin films. This method accurately determines high resistances, revealing insights into the material

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Area of Science:

Semiconductor Physics
Materials Science

Background:

Hydrogenated amorphous silicon (a-Si:H) is a key material in various electronic devices.
Understanding charge transport properties is crucial for optimizing a-Si:H device performance.
Direct resistance measurements can be challenging due to blocking contacts.

Purpose of the Study:

To develop and apply a novel charge sensing technique for measuring charge transport in a-Si:H.
To overcome limitations of traditional methods in measuring high resistances.
To investigate field effect and dispersive transport phenomena in a-Si:H.

Main Methods:

Utilized a nanometer-scale silicon MOSFET as a sensitive charge sensor.
Employed a charge detection technique to measure charge transport.
Performed measurements at varying temperatures to validate the technique.

Main Results:

The charge detection technique successfully measured extremely large resistances in a-Si:H, even with blocking contacts.
Measurements agreed with direct current measurements at higher temperatures.
Probed field effect and dispersive transport characteristics of a-Si:H.

Conclusions:

The developed charge sensing method is effective for characterizing charge transport in a-Si:H.
The technique provides valuable data on the density of states near the Fermi energy.
This approach enhances the understanding and potential application of a-Si:H materials.