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Related Concept Videos

Zener Diodes01:16

Zener Diodes

Zener diodes are specialized semiconductor devices designed to operate in the reverse breakdown region, where they allow current to flow into the cathode, making it positive relative to the anode. This reverse operation distinguishes Zener diodes from conventional diodes and enables their use in various applications, most notably as voltage regulators. One of the defining characteristics of Zener diodes is their nearly vertical I-V (current-voltage) characteristic curve above a certain...
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Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Highly stable resistive switching on monocrystalline ZnO.

Andy Shih1, Wendi Zhou, Julia Qiu

  • 1Department of Electrical and Computer Engineering, McGill University, Montreal, QC, Canada.

Nanotechnology
|February 26, 2010
PubMed
Summary

This study details planar memristive devices on zinc oxide (ZnO) substrates. Electrically formed devices show superior switching stability, crucial for advanced electronic applications.

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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Area of Science:

  • Materials Science
  • Solid-State Physics
  • Nanotechnology

Background:

  • Memristive devices are crucial for next-generation electronics due to their memory properties.
  • Optimizing memristor performance requires understanding the influence of fabrication processes and materials.
  • Zinc oxide (ZnO) is a promising semiconductor material for memristor applications.

Purpose of the Study:

  • To investigate the performance of planar memristive devices fabricated on monocrystalline ZnO substrates.
  • To compare the effects of thermal and electrical forming processes on device characteristics.
  • To elucidate the underlying mechanism governing the switching behavior.

Main Methods:

  • Fabrication of planar memristive devices using Ti/Al and Pt/Au contacts on ZnO substrates.
  • Investigation of device switching characteristics under different forming conditions (thermal and electrical).
  • Analysis of device stability over extended periods and numerous switching cycles.

Main Results:

  • Thermally formed devices exhibited a high OFF/ON resistance ratio (R(OFF)/R(ON)) of approximately 20,000.
  • Electrically formed devices demonstrated excellent switching stability with R(OFF)/R(ON) variations below 2% for over 10^5 seconds and 1800 cycles.
  • Device performance was found to depend significantly on the formation process and electrode materials.

Conclusions:

  • The formation process critically influences memristor performance, with electrical forming yielding superior stability.
  • Oxygen vacancy dynamics (formation, annihilation, and migration) are key to understanding memristive switching in these ZnO-based devices.
  • These findings pave the way for developing robust and reliable memristive memory technologies.