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Alkoxysilane layers compatible with copper deposition for advanced semiconductor device applications.

Diane Rébiscoul1, Vincent Perrut, Thierry Morel

  • 1CEA, LETI, MINATEC, F38054 Grenoble, France. diane.rebiscoul@cea.fr

Langmuir : the ACS Journal of Surfaces and Colloids
|March 2, 2010
PubMed
Summary

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Alkoxysilane coatings on dielectric materials enable copper deposition for semiconductor devices. Different silane chemistries influence copper film morphology, offering tailored properties for advanced electronics.

Area of Science:

  • Materials Science
  • Surface Chemistry
  • Semiconductor Manufacturing

Background:

  • Metallic barriers are crucial in semiconductor devices but pose integration challenges.
  • Organic alkoxysilane layers offer a potential alternative for surface modification.
  • Supercritical CO2 deposition provides a route for controlled layer formation.

Purpose of the Study:

  • To investigate the use of functionalized alkoxysilane layers as a replacement for metallic barriers in semiconductor devices.
  • To explore the influence of silane chemistry and morphology on subsequent copper deposition.
  • To characterize the resulting copper film structures and their formation mechanisms.

Main Methods:

  • Alkoxysilane deposition using supercritical CO2.
  • Copper (Cu) coating via Physical Vapor Deposition (PVD) and Metal-Organic Chemical Vapor Deposition (MOCVD).

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  • Morphological analysis using X-ray Reflectometry (XRR), Neutron Reflectometry (NR), and Atomic Force Microscopy (AFM).

    • Main Results:

    • Alkoxysilane layers were successfully deposited and coated with Cu.
    • MOCVD proved more adaptable than PVD for silanized surfaces.
    • Silane layer integrity was maintained post-Cu deposition.
    • Different silane functional groups (amino, mercapto) and orientations led to varied Cu film morphologies (dense vs. thick, small vs. large grains).

    Conclusions:

    • Functionalized alkoxysilane layers are viable alternatives to metallic barriers.
    • The choice of silane chemistry significantly impacts Cu film growth and morphology.
    • Understanding silane-Cu interactions is key to controlling film properties for semiconductor applications.