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Related Experiment Video

Updated: Jun 15, 2026

Experimental Methods for Trapping Ions Using Microfabricated Surface Ion Traps

Experimental Methods for Trapping Ions Using Microfabricated Surface Ion Traps

Published on: August 17, 2017

Electron beam ion source and electron beam ion trap (invited).

Reinard Becker¹, Oliver Kester

¹Scientific Software Service, Kapellenweg 2a, D-63571 Gelnhausen, Germany. rbecker@egun-igun.com

The Review of Scientific Instruments

|March 3, 2010

Summary

Electron beam ion sources (EBIS) and traps (EBIT) are crucial for highly charged ion production. Their development relies on physics principles and technological advancements, not guesswork.

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In Situ SIMS and IR Spectroscopy of Well-defined Surfaces Prepared by Soft Landing of Mass-selected Ions

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Last Updated: Jun 15, 2026

Experimental Methods for Trapping Ions Using Microfabricated Surface Ion Traps

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In Situ SIMS and IR Spectroscopy of Well-defined Surfaces Prepared by Soft Landing of Mass-selected Ions

In Situ SIMS and IR Spectroscopy of Well-defined Surfaces Prepared by Soft Landing of Mass-selected Ions

Published on: June 16, 2014

Area of Science:

Atomic and Plasma Physics
Accelerator Science
Ion Source Technology

Background:

Electron Beam Ion Sources (EBIS) and Electron Beam Ion Traps (EBIT) are key technologies for generating highly charged ions.
These sources have undergone significant global development over recent decades.
Their advancement is rooted in a strong understanding of physical laws and technological limitations.

Purpose of the Study:

To review the historical achievements in EBIS and EBIT technology.
To highlight promising future developments in ion source research.
To provide insights into the scientific and technological progress of these ion sources.

Main Methods:

Review of historical data and technological advancements in EBIS/EBIT.
Analysis of physical principles governing ion generation and confinement.
Synthesis of past successes and future research directions.

Main Results:

EBIS and EBIT technologies have matured significantly over 40 and 20 years, respectively.
Progress in these fields is driven by fundamental physics and engineering.
A broad international development has occurred, showcasing diverse applications.

Conclusions:

The development of EBIS and EBIT is a testament to applied physics and engineering.
Future research promises further innovations in highly charged ion production.
Understanding physical constraints is key to advancing ion source technology.