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Radio frequency ion source operated with field effect transistor based radio frequency system
1Department of Electrical Engineering, Tohoku University, Sendai 980-8759, Japan. akira@ecei.tohoku.ac.jp
Abstract:
Characteristics of radio frequency (RF) plasma production are investigated using a field effect transistor inverter power supply as an RF wave source. With the frequency of around 0.3 MHz, an electron density over 10(18) m(-3) is produced in argon plasma. Although lower densities are obtained in hydrogen plasma, it drastically increased up to 5x10(18) m(-3) with an axial magnetic field of around 100 G applied in the driver region. Effects of the magnetic field and gas pressure are investigated in the RF produced plasma with the frequency of several hundred kilohertz.
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