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Carborane beam from ITEP Bernas ion source for semiconductor implanters.

D Seleznev¹, G Kropachev, A Kozlov

¹Institute for Theoretical and Experimental Physics, Moscow 117218, Russia.

The Review of Scientific Instruments

|March 3, 2010

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Researchers developed steady-state intense boron ion sources for ion implanters. Carborane ion beams offer better thermal stability and were successfully generated and implanted into silicon wafers.

Area of Science:

Materials Science
Physics
Chemical Engineering

Background:

Developing steady-state intense boron ion sources for ion implanters is crucial for semiconductor manufacturing.
Low-energy boron beams present extraction and transportation challenges.
Boron clusters offer a potential solution to these challenges.

Purpose of the Study:

To develop and evaluate steady-state intense boron ion sources.
To investigate the generation and properties of carborane ion beams.
To assess the feasibility of implanting carborane ions into silicon wafers.

Main Methods:

Utilized the Bernas ion source for ion beam generation.
Focused on decaborane and carborane (C(2)B(10)H(12)) ion species.

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Performed ion implantation experiments on silicon wafers.

Main Results:

Successfully generated decaborane ion beams using the Bernas ion source.
Demonstrated the generation of carborane ion beams, highlighting their superior thermal stability.
Presented results of carborane ion beam implantation into silicon wafers.

Conclusions:

Carborane ion beams are a promising alternative for boron implantation due to enhanced thermal stability.
The developed ion sources and implantation techniques are viable for semiconductor applications.
Further research can optimize carborane ion beam properties for advanced material processing.