Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

PM10 speciation and determination of air quality target levels. A case study in a highly industrialized area of Spain.

The Science of the total environment·2006
Same author

Bone mass and mineral metabolism in kidney transplant patients.

Transplantation proceedings·2002
Same author

Sunscreen and risk of osteoporosis in the elderly: a two-year follow-up.

Dermatology (Basel, Switzerland)·2001
Same author

Cyclical etidronate versus sodium fluoride in established postmenopausal osteoporosis: a randomized 3 year trial.

Bone·2000
Same author

Clinically prescribed sunscreen (sun protection factor 15) does not decrease serum vitamin D concentration sufficiently either to induce changes in parathyroid function or in metabolic markers.

The British journal of dermatology·1998
Same author

Sodium fluoride treatment is a major protector against vertebral and nonvertebral fractures when compared with other common treatments of osteoporosis: a longitudinal, observational study.

Calcified tissue international·1997

Related Experiment Video

Updated: Jun 15, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Current capabilities and future needs for semiconductor ion implantation (invited).

A Renau1

  • 1Varian Semiconductor Equipment Associates, 35 Dory Rd, Gloucester, Massachusetts 01930, USA.

The Review of Scientific Instruments
|March 3, 2010
PubMed
Summary
This summary is machine-generated.

Semiconductor ion implantation, a major particle accelerator application, relies on highly automated tools. Future challenges in ion source development focus on improving beam current, lifetime, and cost-effectiveness.

More Related Videos

Focused Ion Beam Lithography to Etch Nano-architectures into Microelectrodes
13:49

Focused Ion Beam Lithography to Etch Nano-architectures into Microelectrodes

Published on: January 19, 2020

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

Related Experiment Videos

Last Updated: Jun 15, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Focused Ion Beam Lithography to Etch Nano-architectures into Microelectrodes
13:49

Focused Ion Beam Lithography to Etch Nano-architectures into Microelectrodes

Published on: January 19, 2020

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

Area of Science:

  • Materials Science
  • Semiconductor Manufacturing
  • Accelerator Physics

Background:

  • Particle accelerators are extensively used in semiconductor ion implantation, a large-scale commercial application.
  • These accelerators are highly automated, with success metrics including productivity, availability, and cost of ownership.
  • They handle diverse species, energies, and doses, making the ion source a critical component.

Purpose of the Study:

  • To detail the primary applications of ion implantation technology.
  • To describe the beam line architectures employed in ion implanters.
  • To discuss the evolution and future challenges of ion sources for this application.

Main Methods:

  • Review of ion implantation applications in semiconductor manufacturing.
  • Analysis of beam line architectures used in commercial implanters.
  • Examination of ion source performance metrics and development trends.

Main Results:

  • Ion implantation is the largest commercial use of particle accelerators, demanding high automation and specific performance metrics.
  • Ion sources are crucial, with key performance indicators including beam current, operational lifetime, and material costs.
  • Various beam line designs and ion source technologies have evolved to meet application demands.

Conclusions:

  • The ion source is a pivotal element in ion implanter performance, directly impacting productivity and cost.
  • Continued innovation in ion source technology is essential to address future challenges in semiconductor manufacturing.
  • Understanding ion source metrics is key to optimizing ion implantation processes for advanced semiconductor devices.