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Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Switching of BJT01:22

Switching of BJT

Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are reverse-biased. The...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

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Related Experiment Video

Updated: Jun 15, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Single-mode GaAs-Al(x)Ga(1-x)As rib waveguide switches.

J C Shelton, F R Reinhart, R A Logan

    Applied Optics
    |March 4, 2010
    PubMed
    Summary
    This summary is machine-generated.

    Metal-oxide-semiconductor rib waveguides offer low loss and efficient modulation. Researchers demonstrated 90% COBRA switching using a 2x4 matrix, indicating potential for integrated optical circuits.

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    Last Updated: Jun 15, 2026

    Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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    Published on: November 1, 2013

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    Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
    05:39

    Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

    Published on: August 2, 2019

    Area of Science:

    • Photonics and optical engineering
    • Semiconductor device physics

    Background:

    • Metal-oxide-semiconductor (MOS) rib waveguides are crucial components in integrated photonics.
    • Efficient electrooptic modulation is key for optical signal processing and switching.

    Purpose of the Study:

    • To demonstrate the performance of MOS rib waveguides for polarization-independent operation.
    • To showcase the application of these waveguides in a compact optical switch matrix.

    Main Methods:

    • Fabrication and characterization of metal-oxide-semiconductor rib waveguides.
    • Experimental demonstration of COBRA (Coupled-Waveguide Reconfigurable Array) switching using a 2x4 switch matrix.
    • Evaluation of switching efficiency and voltage requirements.

    Main Results:

    • Achieved low loss for arbitrary polarizations in MOS rib waveguides.
    • Demonstrated 90% switching efficiency with an applied voltage of 15 V.
    • Successfully implemented a functional 2x4 optical switch matrix.

    Conclusions:

    • MOS rib waveguides are suitable for polarization-insensitive integrated photonic applications.
    • The demonstrated COBRA switching performance highlights their potential for complex optical circuit designs.
    • These findings suggest versatile applications in advanced optical communication and computing systems.