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Related Concept Videos

MOSFET Amplifiers01:17

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

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Related Experiment Video

Updated: Jun 15, 2026

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
05:57

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Published on: April 1, 2020

Rib waveguide switches with MOS electrooptic control for monolithic integrated optics in GaAs-Al(x)Ga(1-x)As.

J C Shelton, F K Reinhart, R A Logan

    Applied Optics
    |March 6, 2010
    PubMed
    Summary
    This summary is machine-generated.

    Researchers developed low-loss Al(x)Ga(1-x)As rib waveguides for optical switching. Directional coupler switches achieved complete channel switching with less than 20V, demonstrating a compact 2x4 optical switching matrix.

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    Generation and Coherent Control of Pulsed Quantum Frequency Combs
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    Published on: June 8, 2018

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    Last Updated: Jun 15, 2026

    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
    05:57

    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

    Published on: April 1, 2020

    Generation and Coherent Control of Pulsed Quantum Frequency Combs
    06:42

    Generation and Coherent Control of Pulsed Quantum Frequency Combs

    Published on: June 8, 2018

    Area of Science:

    • Materials Science
    • Optoelectronics
    • Semiconductor Devices

    Background:

    • Al(x)Ga(1-x)As heterostructures are crucial for optoelectronic applications.
    • Efficient optical switching is essential for integrated photonic circuits.

    Purpose of the Study:

    • To fabricate low-loss single-mode rib waveguides in Al(x)Ga(1-x)As.
    • To demonstrate efficient optical switching using directional coupler switches.
    • To realize a compact optical switching matrix.

    Main Methods:

    • Fabrication using liquid phase epitaxy, double anodization, and photolithography.
    • Implementation of directional coupler switches with metal-oxide-semiconductor (MOS) configuration.
    • Utilizing a stepped Delta-beta reversal electrode for switching control.

    Main Results:

    • Achieved low optical loss of 1.4 cm(-1) in single-mode rib waveguides.
    • Demonstrated complete optical channel switching with applied voltages below 20 V.
    • Successfully fabricated a 2x4 optical switching matrix with low-loss waveguide offsets.

    Conclusions:

    • Al(x)Ga(1-x)As rib waveguides enable efficient low-loss optical switching.
    • The demonstrated MOS-controlled directional coupler switch is effective for integrated optics.
    • Compact optical circuits with high isolation are feasible using these techniques.