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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

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Related Experiment Video

Updated: Jun 15, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

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Published on: November 1, 2013

Zero-internal fields in nonpolar InGaN/GaN multi-quantum wells grown by the multi-buffer layer technique.

Hooyoung Song¹, Jin Soak Kim, Eun Kyu Kim

¹Quantum-Function Spinics Laboratory, Department of Physics, Hanyang University, Seoul, Korea.

|March 9, 2010

Summary

Nonpolar a-plane Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) multi-quantum wells (MQWs) show potential for high-efficiency light-emitting diodes. These structures overcome efficiency droop issues common in traditional c-plane designs.

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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

Area of Science:

Materials Science
Solid State Physics
Optoelectronics

Background:

Conventional c-plane Gallium Nitride (GaN) based light-emitting diodes (LEDs) suffer from efficiency limitations due to strong piezoelectric fields.
Nonpolar InGaN/GaN multi-quantum wells (MQWs) offer a promising alternative by minimizing these fields.

Purpose of the Study:

To demonstrate the potential of nonpolar a-plane InGaN/GaN MQWs for high-performance optoelectronic devices.
To investigate the structural quality, electron capture barriers, and optical properties of nonpolar InGaN/GaN MQWs.

Main Methods:

Growth of a-GaN template on r-plane sapphire using a multi-buffer layer technique.
High-resolution X-ray diffraction (HRXRD) for structural quality assessment.
Deep Level Transient Spectroscopy (DLTS) for barrier analysis.
Temperature-dependent photoluminescence (PL) spectroscopy.

Main Results:

Achieved high structural quality of the a-GaN template with a narrow omega full width at half maximum (FWHM) of 418 arcsec.
Identified lower electron capture barriers in a-plane InGaN/GaN MQWs compared to c-plane samples, suggesting a solution to efficiency droop.
Observed temperature-dependent PL peak shifts well-fitted by Varshni's equation, indicating minimal internal fields.
Demonstrated high photoluminescence efficiency (0.27) for the nonpolar MQWs.

Conclusions:

Nonpolar a-plane InGaN/GaN MQWs are free from strong piezoelectric fields, addressing a key limitation in GaN-based LEDs.
These nonpolar structures exhibit superior properties, including lower electron capture barriers and high optical efficiency, making them crucial for overcoming efficiency limitations in conventional LEDs.