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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Kyoung Chan Kim1, Il Ki Han, Jung Il Lee
1Nano Device Research Center, Korea Institute of Science and Technology, Seoul, Korea.
Chirped InAs quantum dot (QD) laser diodes (LDs) exhibit a higher linewidth enhancement factor (alpha factor) due to their unique structure. This finding is crucial for optimizing QD laser performance.
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