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Published on: May 21, 2016
Temperature-compensated aluminum nitride lamb wave resonators
Chih-Ming Lin1, Ting-Ta Yen, Yun-Ju Lai
1Department of Mechanical Engineering, University of California, Berkeley, CA, USA. gimmylin@berkeley.edu
Summary
This study demonstrates temperature compensation for Aluminum Nitride (AlN) Lamb wave resonators using a SiO2 layer. The enhanced resonators show minimal frequency variation across a wide temperature range, improving device stability.
Area of Science:
- Materials Science
- Electrical Engineering
- Acoustic Devices
Background:
- Lamb wave resonators are crucial for frequency control.
- Temperature fluctuations degrade the performance of conventional resonators.
- Aluminum Nitride (AlN) is a piezoelectric material suitable for resonator fabrication.
Purpose of the Study:
- To theoretically investigate and experimentally demonstrate temperature compensation in AlN Lamb wave resonators.
- To achieve a zero first-order temperature coefficient of frequency (TCF) using a composite structure.
- To evaluate the temperature stability of the compensated resonators.
Main Methods:
- Theoretical study of temperature compensation mechanisms in AlN Lamb wave resonators.
- Experimental fabrication of AlN/SiO2 composite membrane Lamb wave resonators.
- Characterization of resonator performance, including TCF and fractional frequency variation over a temperature range.
Main Results:
- A composite membrane of 1 µm AlN and 0.83 µm SiO2 achieved temperature compensation.
- The resonator exhibited a first-order TCF of -0.31 ppm/°C and a second-order TCF of -22.3 ppb/°C².
- Fractional frequency variation remained below 250 ppm from -55°C to 125°C.
Conclusions:
- The proposed SiO2 compensating layer effectively reduces the temperature dependency of AlN Lamb wave resonators.
- The temperature-compensated AlN Lamb wave resonator demonstrates excellent thermal stability.
- These devices are promising for applications requiring high thermal stability, such as oscillators, filters, and sensors.
