Current development and patents on high-brightness white LED for illumination
Wen-Yuan Pang1, Ikai Lo, Chia-Ho Hsieh
1Department of Physics, Institute of Material Science and Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan 80424, Republic of China.
Abstract:
In this paper, we reviewed the current development and patents for the application of high-brightness and high-efficiency white light-emitting diode (LED). The high-efficiency GaN nanostructures, such as disk, pyramid, and rod were grown on LiAlO(2) substrate by plasma-assisted molecular-beam epitaxy, and a model was developed to demonstrate the growth of the GaN nanostructures. Based on the results, the GaN disk p-n junction was designed for the application of high brightness and high efficiency white LED.
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