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Updated: Jun 15, 2026

10:31
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
High-mobility ambipolar transistors and high-gain inverters from a donor-acceptor copolymer semiconductor
Felix Sunjoo Kim1, Xugang Guo, Mark D Watson
1Department of Chemical Engineering, University of Washington, Seattle, WA 98195-1750, USA.
Advanced Materials (Deerfield Beach, Fla.)
|March 11, 2010
Abstract
No abstract available in PubMed .
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