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Updated: Jun 15, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Carbon nanotubes anchored to silicon for device fabrication
Kristina T Constantopoulos1, Cameron J Shearer, Amanda V Ellis
1School of Chemistry, Physics and Earth Sciences, Flinders University, GPO Box 2100, Bedford Park, South Australia 5042, Australia.
Abstract:
This report highlights recent progress in the fabrication of vertically aligned carbon nanotubes (VA-CNTs) on silicon-based materials. Research into these nanostructured composite materials is spurred by the importance of silicon as a basis for most current devices and the disruptive properties of CNTs. Various CNT attachments methods of covalent and adsorptive nature are critically compared. Selected examples of device applications where the VA-CNT on silicon assemblies are showing particular promise are discussed. These applications include field emitters, filtration membranes, dry adhesives, sensors and scaffolds for biointerfaces.

