Oxygen plasma exposure effects on indium oxide nanowire transistors

In(2)O(3) nanowire transistors are fabricated with and without oxygen plasma exposure of various regions of the nanowire. In two-terminal devices, exposure of the channel region results in an increased conductance of the channel region. For In(2)O(3) nanowire transistors in which the source/drain regions are exposed to oxygen plasma, the mobility, on-off current ratio and subthreshold slope, are improved with respect to those of non-exposed devices. Simulations using a two-dimensional device simulator (MEDICI) show that improved device performance can be quantified in terms of changes in interfacial trap, shifts in fixed charge densities and the corresponding reduction in Schottky barrier height at the contacts.