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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
The surface potential of insulating thin films negatively charged by a low-energy focused electron beam
1Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Department of Electronic Science and Technology, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China.
Abstract:
We report on the surface potential characteristics in the equilibrium state of the grounded insulating thin films of several 100 nm thickness negatively charged by a low-energy (<5 keV) focused electron beam, which have been simulated with a newly developed two-dimensional self-consistent model incorporating electron scattering, charge transport and charge trapping. The obtained space charge is positive and negative within and outside the region, respectively, where the electron and hole densities are greater than the trap density. Thus, the surface potential is relatively high around the center, then it decreases to a maximum negative value and finally tends to zero along the radial direction. The position of the maximum value is far beyond the range of e-beam irradiation as a consequence of electron scattering and charge transport. Moreover, a positive electric field can be generated near the surface in both radial and axial directions. The surface potential at center exhibits a maximum negative value in the condition of the approximately 2 keV energy non-penetrating e-beam in this work, which is supported by some existing experimental data in scanning electron microscopy. Furthermore, the surface potential decreases with the increase in beam current, trap density and film thickness, but with the decrease in electron mobility.
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