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Imperfections in Crystal Structure: Stoichiometric Point Defects

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Related Experiment Video

Updated: Jun 14, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Nodular defects in dielectric multilayers and thick single layers.

|March 24, 2010

Summary

Nodular defects in dielectric coatings share a consistent shape across various materials and layer counts. Submicroscopic surface defects and contamination act as nuclei for nodule formation in thin-film systems.

Area of Science:

Materials Science
Thin-Film Technology
Surface Science

Background:

Nodular defects are a common issue in dielectric single layers and multilayer systems.
Understanding the origin of these defects is crucial for improving optical coating performance.

Purpose of the Study:

To investigate the morphology and origin of nodular defects in dielectric thin films.
To identify the nucleation sites responsible for nodule formation.
To propose a growth model and prevention strategies for nodular defects.

Main Methods:

Scanning Electron Microscopy (SEM) for defect morphology analysis.
Transmission Electron Microscopy (TEM) replication techniques for substrate surface investigation.
Electron micro-probe analysis for elemental identification of nucleation sites.

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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

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Last Updated: Jun 14, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

Main Results:

Nodules exhibit a consistent shape regardless of material composition or layer number.
Nodules in LaF(3) layers are linked to spherical particles in underlying Ge layers.
Submicroscopic surface defects and contamination on glass substrates serve as nucleation centers for multilayer nodules.

Conclusions:

Nodule formation is initiated by specific submicroscopic surface features or contaminants.
A general growth model for nodular defects can be established.
Identifying and controlling substrate surface quality is key to preventing nodular defects.