Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Imperfections in Crystal Structure: Point, Line and Plane Defects01:25

Imperfections in Crystal Structure: Point, Line and Plane Defects

A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...
Significance of Displacement Current01:27

Significance of Displacement Current

A displacement current is analogous to a real current in Ampère's law, participating in Ampère's law the same way as the usual conduction current. However, it is produced by a changing electric field. Displacement current is defined in terms of a time-varying electric field, and also has an associated displacement current density. By adding a term accounting for displacement current, Maxwell modified the existing Ampère's law, which is now called generalized Ampère's law.
Castigliano's Theorem01:18

Castigliano's Theorem

Castigliano's theorem analyzes displacements and rotations in elastic structures. It relates the derivative of elastic strain energy to the applied forces or moments, allowing for the calculation of deformations. The theorem states that the partial derivative of the total strain energy of a system with respect to a specific load results in the displacement at the point where the load is applied. This principle applies to both forces and moments.
Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
Position and Displacement01:31

Position and Displacement

The position of an object defines its location relative to a convenient frame of reference at any particular time. A frame of reference is an arbitrary set of axes from which the position and motion of an object are described. Earth is often used as a frame of reference, and we often describe the position of an object as it relates to stationary objects on Earth. For example, a rocket launch could be described in terms of the position of the rocket with respect to Earth as a whole. On the other...
Position and Displacement01:31

Position and Displacement

The position of an object defines its location relative to a convenient frame of reference at any particular time. A frame of reference is an arbitrary set of axes from which the position and motion of an object are described. Earth is often used as a frame of reference, and we often describe the position of an object as it relates to stationary objects on Earth. For example, a rocket launch could be described in terms of the position of the rocket with respect to Earth as a whole. On the other...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same journal

Tularaemia; a problem in diagnosis.

Canadian Medical Association journal·2010
Same journal

CONTROL of cancer.

Canadian Medical Association journal·2010
Same journal

Bilateral diphtheritic external otitis treated with sulfathiazole.

Canadian Medical Association journal·2010
Same journal

Hypoplastic anaemia treated with transfusions and folic acid fraction.

Canadian Medical Association journal·2010
Same journal

Lauron in rheumatoid arthritis; a further report.

Canadian Medical Association journal·2010
Same journal

HOW the socialist looks at national health service in England.

Canadian Medical Association journal·2010
See all related articles

Related Experiment Video

Updated: Jun 14, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Notes on Some Dislocations

G P Girdwood

    Canadian Medical Association Journal
    |March 24, 2010
    PubMed
    Summary

    No abstract available in PubMed .

    More Related Videos

    Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
    11:14

    Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

    Published on: May 28, 2016

    A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens
    07:15

    A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

    Published on: June 2, 2017

    Related Experiment Videos

    Last Updated: Jun 14, 2026

    Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
    06:57

    Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

    Published on: July 17, 2020

    Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
    11:14

    Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

    Published on: May 28, 2016

    A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens
    07:15

    A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

    Published on: June 2, 2017