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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Carrier dynamics in InAs/AlAs quantum dots: lack in carrier transfer from wetting layer to quantum dots

T S Shamirzaev1, D S Abramkin, A V Nenashev

  • 1Institute of Semiconductor Physics, Siberian Brunch of RAS, 630090 Novosibirsk, Lavrentyev avenue, 13, Russia. timur@thermo.isp.nsc.ru

Nanotechnology
|March 25, 2010
PubMed

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