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P-N junction

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: Jun 14, 2026

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

Self-powered nanowire devices.

Sheng Xu¹, Yong Qin, Chen Xu

¹School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA.

Nature Nanotechnology

|March 30, 2010

Summary

This summary is machine-generated.

Researchers developed integrated zinc oxide (ZnO) nanowire arrays for efficient mechanical energy harvesting. These arrays generate sufficient power for electronic devices, demonstrating a self-powered system for sensors.

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Area of Science:

Materials Science
Nanotechnology
Energy Harvesting

Background:

Mechanical energy harvesting offers a battery-free power source for electronic devices.
Individual piezoelectric nanowires produce insufficient voltage and power for practical applications.
Integrating numerous nanowires requires precise alignment and synchronized energy transfer.

Purpose of the Study:

To demonstrate the integration of zinc oxide (ZnO) nanowires into arrays for enhanced energy harvesting.
To achieve sufficient power output from nanowire arrays to operate real-world devices.
To showcase a self-powered system utilizing nanowire-based energy generation and sensing.

Main Methods:

Vertical and lateral integration of ZnO nanowires into ordered arrays.
Fabrication of multi-layered nanowire structures for increased power density.
Testing of integrated nanowire arrays under low strain conditions.

Main Results:

Lateral integration of 700 ZnO nanowire rows yielded a peak voltage of 1.26 V at 0.19% strain.
Vertical integration of three ZnO nanowire layers achieved a peak power density of 2.7 mW cm(-3).
Demonstrated powering of a nanowire pH sensor and a nanowire UV sensor.

Conclusions:

Integrated ZnO nanowire arrays can generate substantial electrical power from mechanical vibrations.
The developed nanogenerators are capable of powering low-power electronic devices and sensors.
This work presents a viable pathway towards self-powered systems based entirely on nanowire technology.