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Updated: Jun 14, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Inelastic electron tunneling spectroscopy study of thin gate dielectrics

James W Reiner1, Sharon Cui, Zuoguang Liu

  • 1Yale University, New Haven, CT 06520-8284, USA.

Advanced Materials (Deerfield Beach, Fla.)
|April 1, 2010
PubMed
Summary

Inelastic electron tunneling spectroscopy (IETS) is a key technique for analyzing novel insulating materials in advanced transistors. It reveals crucial structural and electrical properties, including interface reactions and carrier mobility.

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