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Electrodeposition

Electrodeposition

Electrodeposition is a technique used to separate an analyte from interferents by electrochemical processes. Here, the analyte is a metal ion that can be deposited on an electrode immersed in the sample solution. The electrochemical setup consists of an anode and a cathode. When an electric current is applied to the setup, oxidation occurs at the anode. At the cathode, which consists of a large metal surface, metal ions undergo reduction and deposit onto the surface.
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Processes at Electrodes

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The electrode interacts with ions in the electrolyte solution at its interface. The rate of oxidation and reduction depends on the speed at which electrons can transfer through this interface. As ions attach to or leave the electrode surface, the electrode acquires a charge, and an electrical potential forms across the interface, making the process more difficult to reach equilibrium. The charge on the electrode affects the local ion concentrations in the solution, though thermal motion...

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Related Experiment Video

Updated: Jun 14, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Significant carrier concentration changes in native electrodeposited ZnO.

Shawn Chatman¹, Lisa Emberley, Kristin M Poduska

¹Department of Physics and Physical Oceanography, Memorial University of Newfoundland, St. John's, Newfoundland A1B 3X7, Canada.

ACS Applied Materials & Interfaces

|April 2, 2010

Summary

Unintentional hydrogen doping significantly affects zinc oxide (ZnO) carrier concentration during electrodeposition. This finding impacts controlling ZnO properties like conductivity and morphology.

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Area of Science:

Materials Science
Electrochemistry
Semiconductor Physics

Background:

Zinc oxide (ZnO) is a wide-bandgap semiconductor with applications in electronics and optoelectronics.
Controlling carrier concentration in ZnO is crucial for its functional properties.
Previous studies focused on intentional doping for extrinsic control.

Purpose of the Study:

To investigate the impact of unintentional hydrogen doping on ZnO carrier concentration during electrodeposition.
To establish the relationship between electrodeposition overpotential and ZnO properties.
To elucidate the mechanism behind n-type conductivity in electrodeposited ZnO.

Main Methods:

Electrodeposition of ZnO films.
Mott-Schottky analysis to determine carrier concentration.
Diffuse reflectance spectroscopy to measure optical band gaps.
Correlation analysis between deposition potential, carrier concentration, and band gap.

Main Results:

Unintentional hydrogen doping significantly influences ZnO carrier concentration, comparable to extrinsic doping.
Carrier concentration in ZnO decreases from 10(21) to 10(18) cm(-3) with increasing electrodeposition overpotential.
A positive correlation between larger optical band gaps and higher carrier concentrations was observed, consistent with the Moss-Burstein effect.
Kinetic defects introduced at higher overpotentials appear to compete with hydrogen doping, reducing net carrier concentration.

Conclusions:

Hydrogen doping is a key factor in the n-type conductivity of electrodeposited ZnO.
Electrodeposition overpotential can be utilized to tune ZnO carrier concentration and optical properties.
Understanding unintentional doping is vital for controlling ZnO growth rate and morphology.