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Nanomoulding of Functional Materials, a Versatile Complementary Pattern Replication Method to Nanoimprinting
Published on: January 23, 2013
Nanoscale patterning by UV nanoimprint lithography using an organometallic resist
Canet Acikgoz1, Boris Vratzov, Mark A Hempenius
1Molecular Nanofabrication Group and Materials Science and Technology of Polymers, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands.
ACS Applied Materials & Interfaces
|April 2, 2010
Summary
This study demonstrates poly(ferrocenylmethylphenylsilane) (PFMPS) patterns fabricated using imprint lithography for high-contrast dry etching. These PFMPS etch masks enable precise pattern transfer into silicon substrates with excellent etch resistance.
Area of Science:
- Materials Science
- Nanotechnology
- Lithography
Background:
- Developing high-contrast etch masks is crucial for advanced microfabrication.
- Conventional resists often lack the necessary etch resistance for demanding processes.
Purpose of the Study:
- To fabricate high-contrast etch masks using poly(ferrocenylmethylphenylsilane) (PFMPS).
- To evaluate the performance of PFMPS as an etch mask in dry etch processes.
Main Methods:
- Step-and-flash imprint lithography was used to pattern PFMPS.
- UV nanoimprint lithography created the initial resist template.
- Argon sputtering and oxygen plasma etching were employed for pattern development.
Main Results:
- PFMPS patterns with feature sizes down to 30 nm were successfully fabricated.
- PFMPS demonstrated high resistance to oxygen-based reactive ion etching (RIE).
- An etch contrast of approximately 300 was achieved when transferring patterns into silicon.
Conclusions:
- PFMPS is a promising material for high-contrast etch masks in dry etching.
- The developed method allows for precise pattern transfer into silicon substrates.
- The iron and silicon content in PFMPS contributes to its superior etch resistance.
