Internal quantum efficiency modeling of silicon photodiodes

Area of Science:

• Optoelectronics
• Semiconductor device physics
• Metrology

Background:

• Accurate characterization of silicon photodiodes is crucial for optical measurements.
• Internal quantum efficiency (IQE) is a key parameter influencing photodiode performance.
• Existing models require validation across specific wavelength ranges.

Purpose of the Study:

• To model the internal quantum efficiency (IQE) versus wavelength for silicon photodiodes.
• To validate the accuracy of a simplified IQE model.
• To support the National Institute of Standards and Technology (NIST) spectral radiant power responsivity scale.

Main Methods:

• Measured external quantum efficiencies of three transmission optical trap detectors.
• Utilized an extensive set of laser wavelengths (400 nm to 900 nm).
• Incorporated trap transmittance measurements into the IQE model.

Main Results:

• A simplified IQE model accurately fits experimental data.
• Achieved fitting accuracy better than 0.01%.
• Demonstrated the model's effectiveness for silicon photodiodes.

Conclusions:

• The validated IQE model enhances the accuracy of spectral responsivity scales.
• Provides crucial support for NIST and other National Metrology Institutes.
• Confirms the reliability of optical trap detector measurements.