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Updated: Jun 14, 2026

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
Published on: December 7, 2017
Effect of surface passivation on dielectrophoresis-prepared multi-channel ZnO nanowire field effect transistor (FETs)
Jung-Hwan Hyung1, Dong-Joo Kim, Seung-Yong Lee
1Department of Semiconductor Science and Technology, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756, Korea.
Abstract:
We report on the effect of surface passivation on the electrical characteristics of multi-channel ZnO nanowire field-effect transistors (FETs). Surface passivation was performed using a SiO2 layer on ZnO nanowires. Multi-channel FETs were prepared by assembling as synthesized ZnO nanowires on a SiO2/Si substrate using an alternating current (AC) dielectrophoresis (DEP) technique. We observed that surface passivation with a SiO2 layer on ZnO nanowires was significantly affected by electrical characteristics of multi-channel ZnO nanowire FETs such as the threshold voltage and transconductance.
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