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Related Concept Videos

Atomic Nuclei: Types of Nuclear Relaxation01:28

Atomic Nuclei: Types of Nuclear Relaxation

Nuclear relaxation restores the equilibrium population imbalance and can occur via spin–lattice or spin–spin mechanisms, which are first-order exponential decay processes.
In spin–lattice or longitudinal relaxation, the excited spins exchange energy with the surrounding lattice as they return to the lower energy level. Among several mechanisms that contribute to spin–lattice relaxation, magnetic dipolar interactions are significant. Here, the excited nucleus transfers energy to a nearby...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Atomic Nuclei: Nuclear Relaxation Processes01:23

Atomic Nuclei: Nuclear Relaxation Processes

In the absence of an external magnetic field, nuclear spin states are degenerate and randomly oriented. When a magnetic field is applied, the spins begin to precess and orient themselves along (lower energy) or against (higher energy) the direction of the field. At equilibrium, a slight excess population of spins exists in the lower energy state. Because the direction of the magnetic field is fixed as the z-axis,  the precessing magnetic moments are randomly oriented around the z-axis. This...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

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Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
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Nonlinear nonequilibrium quasiparticle relaxation in Josephson junctions.

V M Krasnov1

  • 1Department of Physics, Stockholm University, AlbaNova University Center, SE-10691 Stockholm, Sweden. vladimir.krasnov@fysik.su.se

Physical Review Letters
|April 7, 2010
PubMed
Summary

Nonlinear effects in stacked Josephson junctions are revealed, leading to enhanced boson emission and a new radiative state. This state enables direct conversion of electric power to light, potentially creating THz lasers.

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Area of Science:

  • Condensed Matter Physics
  • Superconductivity
  • Quantum Electronics

Background:

  • Stacked Josephson junctions exhibit complex nonequilibrium phenomena.
  • Nonlinearity in these systems is crucial for understanding exotic quantum effects.
  • Previous models often simplified the kinetic balance equations.

Purpose of the Study:

  • To numerically solve nonlinear kinetic balance equations for stacked Josephson junctions.
  • To analyze strongly nonequilibrium phenomena and identify novel nonlinear effects.
  • To explore potential applications in quantum devices and THz technology.

Main Methods:

  • Numerical solution of a full set of nonlinear kinetic balance equations.
  • Analysis of phenomena at even-gap voltages (V = 2nΔ/e).
  • Investigation of behavior under strong disequilibrium conditions.

Main Results:

  • Nonlinearity becomes significant even at small disequilibrium.
  • Observed overlapping of nonequilibrium bosonic bands at even-gap voltages, enhancing boson emission and causing tunnel conductance dips.
  • Discovered a new radiative solution at strong disequilibrium, where the junction acts as a light-emitting diode converting electrical power directly to boson emission.

Conclusions:

  • Nonlinear kinetic effects are fundamental in stacked Josephson junctions, even under mild disequilibrium.
  • A novel radiative state offers a direct pathway for electrical-to-optical energy conversion in superconductors.
  • This phenomenon holds promise for developing new superconducting cascade lasers in the THz frequency range.