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Related Experiment Video

Updated: Jun 14, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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Interstitial-mediated diffusion in germanium under proton irradiation.

H Bracht1, S Schneider, J N Klug

  • 1Institute of Materials Physics, University of Münster, Wilhelm-Klemm-Strasse 10, D-48149 Münster, Germany. bracht@uni-muenster.de

Physical Review Letters
|April 7, 2010
PubMed
Summary
This summary is machine-generated.

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Proton irradiation enhances diffusion in germanium (Ge) primarily through an interstitial mechanism, not vacancy-mediated processes. This discovery offers solutions for fabricating advanced germanium nanoelectronic devices.

Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Nuclear Materials

Background:

  • Germanium (Ge) is a crucial semiconductor for nanoelectronics.
  • Understanding diffusion mechanisms in Ge under irradiation is vital for device stability and performance.
  • Current fabrication methods face challenges like donor deactivation.

Purpose of the Study:

  • To investigate the impact of 2.5 MeV proton irradiation on self-diffusion and dopant diffusion in germanium.
  • To elucidate the dominant diffusion mechanism (interstitial vs. vacancy-mediated) in Ge under proton irradiation.
  • To identify pathways for suppressing undesirable diffusion effects and solving donor deactivation.

Main Methods:

  • Proton irradiation experiments using 2.5 MeV protons on germanium.

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Last Updated: Jun 14, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

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Published on: July 17, 2020

Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries
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Published on: April 22, 2013

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08:15

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Published on: February 11, 2012

  • Analysis of self-diffusion using Ge isotope multilayer structures.
  • Monitoring the diffusion of boron (B) and phosphorus (P) dopants.

    • Main Results:

    • Observed depth-independent broadening of Ge isotope multilayers under irradiation, indicating enhanced self-diffusion.
    • Demonstrated enhanced diffusion of boron (B) and retarded diffusion of phosphorus (P).
    • Evidence points to an interstitial-mediated diffusion process dominating under irradiation.

    Conclusions:

    • Proton irradiation in Ge is governed by interstitial diffusion mechanisms.
    • This finding provides a strategy to suppress vacancy-mediated diffusion.
    • Potential to overcome donor deactivation issues in germanium-based nanoelectronic device fabrication.