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Updated: Jun 14, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Evidence for developing fractional quantum Hall states at even denominator 1/2 and 1/4 fillings in asymmetric wide

J Shabani1, T Gokmen, Y T Chiu

  • 1Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA.

Physical Review Letters
|April 7, 2010
PubMed

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