Related Experiment Video

Updated: Jun 14, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Spin-dependent recombination between phosphorus donors in silicon and Si/SiO{2} interface states investigated with

Felix Hoehne1, Hans Huebl, Bastian Galler

  • 1Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany. hoehne@wsi.tum.de

Physical Review Letters
|April 7, 2010
PubMed

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