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Updated: Jun 14, 2026

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
Published on: May 23, 2018
Inequivalent routes across the Mott transition in V2O3 explored by X-ray absorption
F Rodolakis1, P Hansmann, J-P Rueff
1Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud, F-91405 Orsay, France.
Abstract:
The changes in the electronic structure of V2O3 across the metal-insulator transition induced by temperature, doping, and pressure are identified using high resolution x-ray absorption spectroscopy at the V pre-K edge. Contrary to what has been taken for granted so far, the metallic phase reached under pressure is shown to differ from the one obtained by changing doping or temperature. Using a novel computational scheme, we relate this effect to the role and occupancy of the a{1g} orbitals. This finding unveils the inequivalence of different routes across the Mott transition in V2O3.
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