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Updated: Jun 14, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Anomalous Hanle effect due to optically created transverse overhauser field in single InAs/GaAs quantum dots
O Krebs1, P Maletinsky, T Amand
1CNRS-Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis, France.
Abstract:
We report on experimental observations of an anomalous Hanle effect in individual self-assembled InAs/GaAs quantum dots. A sizable electron spin polarization photocreated under constant illumination is maintained in transverse magnetic fields as high as approximately 1 T, up to a critical field where it abruptly collapses. These striking anomalies of the Hanle curve point to a novel mechanism of dynamic nuclear spin polarization giving rise to an effective magnetic field generated perpendicular to the optically injected electron spin polarization. This transverse Overhauser field, confirmed by the cancellation of electron Zeeman splitting below the critical field, is likely to be a consequence of the strong inhomogeneous quadrupolar interactions typical for strained quantum dots.
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