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Published on: August 2, 2019
CT-invariant quantum spin Hall effect in ferromagnetic graphene
1Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. sunqf@aphy.iphy.ac.cn
We predict a new quantum spin Hall effect (QSHE) in ferromagnetic graphene, distinct from previous QSHE phenomena. This effect, protected by charge conjugation (C) invariance, leads to unique quantum plateaus in longitudinal resistance.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Phenomena
Background:
- The quantum spin Hall effect (QSHE) is typically protected by time-reversal (T) invariance.
- Existing QSHE models rely on spin-orbit interaction for their physical origin.
- Ferromagnetic materials offer alternative platforms for exploring novel quantum effects.
Purpose of the Study:
- To predict a novel quantum spin Hall effect (QSHE) in ferromagnetic graphene.
- To investigate the physical origin and protective symmetries of this new QSHE.
- To analyze the resulting longitudinal and spin Hall resistance characteristics.
Main Methods:
- Theoretical prediction of QSHE in ferromagnetic graphene under a magnetic field.
- Analysis of symmetry protection, identifying CT invariance (Charge conjugation-Time reversal).
- Calculation of longitudinal resistance quantum plateaus and spin Hall resistance.
Main Results:
- A novel QSHE is predicted in ferromagnetic graphene, independent of spin-orbit interaction.
- This QSHE is protected by CT invariance, differing from T-invariant QSHE.
- Longitudinal resistance exhibits quantum plateaus at specific fractional values (1/2, 1/6, 3/28, ...), dependent on carrier filling.
- The spin Hall resistance is found to be robust against disorder.
Conclusions:
- Ferromagnetic graphene provides a new avenue for realizing QSHE without spin-orbit interaction.
- The CT invariance protection mechanism offers a distinct pathway for topological phenomena.
- The predicted quantum plateaus and robust spin Hall resistance highlight potential applications in spintronics.
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